Kosowsky, S. D.Pershan, PeterKrisch, K. S.Bevk, J.Green, M. L.Brasen, D.Feldman, L. C.Roy, P. K.2013-03-011997Kosowsky, S. D., Peter S. Pershan, K. S. Krisch, J. Bevk, M. L. Green, D. Brasen, L. C. Feldman, and P. K. Roy. 1997. Evidence of annealing effects on a high-density Si/SiO2 interfacial layer. Applied Physics Letters 70(23): 3119-3121.0003-6951http://nrs.harvard.edu/urn-3:HUL.InstRepos:10357486Thermally grown Si(001)/SiO\(_2\) samples were studied by x-ray reflectivity. Fits of model electron density profiles to the data reveal the existence of an interfacial layer at the Si/SiO\(_2\) interface up to 15-Å-thick, with density higher than either the crystalline Si or the main oxide layer. This density of the layer is reduced by a postoxidation anneal.en-USJournal Article2013-03-0110.1063/1.119090