Schröder, TimTrusheim, MatthewWalsh, MichaelLi, LuozhouZheng, JiabaoSchukraft, MarcoSipahigil, AlpEvans, RuffinSukachev, DenisNguyen, ChristianPacheco, JoseCamacho, RyanBielejec, EdwardLukin, MikhailEnglund, Dirk2019-10-032017Schröder, Tim, Matthew E. Trusheim, Michael Walsh, Luozhou Li, Jiabao Zheng, Marco Schukraft, Alp Sipahigil, et al. 2017. “Scalable Focused Ion Beam Creation of Nearly Lifetime-Limited Single Quantum Emitters in Diamond Nanostructures.” Nature Communications 8 (1). https://doi.org/10.1038/ncomms15376.2041-1723http://nrs.harvard.edu/urn-3:HUL.InstRepos:41461266The controlled creation of defect centre-nanocavity systems is one of the outstanding challenges for efficiently interfacing spin quantum memories with photons for photon-based entanglement operations in a quantum network. Here we demonstrate direct, maskless creation of atom-like single silicon vacancy (SiV) centres in diamond nanostructures via focused ion beam implantation with similar to 32 nm lateral precision and <50 nm positioning accuracy relative to a nanocavity. We determine the Si+ ion to SiV centre conversion yield to be similar to 2.5% and observe a 10-fold conversion yield increase by additional electron irradiation. Low-temperature spectroscopy reveals inhomogeneously broadened ensemble emission linewidths of similar to 51 GHz and close to lifetime-limited single-emitter transition linewidths down to 126 +/- 13 MHz corresponding to similar to 1.4 times the natural linewidth. This method for the targeted generation of nearly transform-limited quantum emitters should facilitate the development of scalable solid-state quantum information processors.en-USScalable focused ion beam creation of nearly lifetime-limited single quantum emitters in diamond nanostructuresJournal Article2019-10-0310.1038/ncomms15376